Uklad Scalony Lark 43.1, Schematy procesorow

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K9K8G08U1A
FLASH MEMORY
K9XXG08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS
I
N SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life
s
upport, critical care, medical, safety equipment, or similar
applica
t
ions where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procureme
n
t to which special terms or provisions may apply.
*
S
ams
u
ng E
le
ctro
ni
cs r
es
erve
s
the
ri
ght t
o
chan
g
e pr
o
duct
s
or s
pe
cific
at
ion
wi
thou
t
notic
e
.
1
K9
F
4G
0
8U0A
K9K8G08U1A
FLASH MEMORY
Document Title
512M x 8 Bit / 1G x 8 Bit NAND Fla
sh
Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
Nov. 09. 2005
Advance
0.1
1. Leaded part is eliminated
2. tRHW is defined
Jan. 10. 2006
Preliminary
1.
0
1.Comment of "Addressing for program operation" is added (p.17)
Mar. 7. 2006
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change th
e
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any
q
uesti
on
s, ple
as
e co
nta
ct th
e
SAMS
U
NG b
ra
nch o
ffi
ce ne
ar
your
o
ffice.
2
K9
F
4G
0
8U0A
K9K8G08U1A
FLASH MEMORY
5
12M x
8 Bit / 1G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F
4
G08U0A-P
TSOP1
K9F4G08U0A-I
2.70 ~ 3.60V
X8
52ULGA
K9K
8
G08U1A-I
F
EATUR
E
S
•
Voltage Supply
- 2.70V ~ 3.60V
•
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
•
Automatic Program and Erase
- Page Pro
g
ram : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
•
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25
µ
s(Max.)
- Serial Ac
c
ess : 25ns(Min.)
•
Fast Write Cycle Time
- Page Program time : 200
µ
s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles
(
with 1bit/512Byte
ECC)
- Data Retention : 10 Years
•
Command Driven Operation
•
Intelligent Copy-Back with internal 1bit/528Byte EDC
•
Unique ID for Copyright Protection
•
Package :
- K9F4G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9K8G08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200
µ
s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for a
d
dress and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of
d
ata. Even the write-intensive systems can take advantage of the K9F4G08U0A
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real
t
ime mapping-out algorithm. The K9F4G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-v o l a t i l i t y.
3
K9
F
4G
0
8U0A
K9K8G08U1A
FLASH MEMORY
P
IN CON
F
IGURATION (TSOP1)
K9F4G08U0A-PCB
0
/PIB0
N.C
N.C
N.C
N.C
N.C
N.
C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
AL
WE
WP
N.C
N.C
N.C
N.C
N.C
1
3
5
7
9
10
11
1
13
1
15
1
17
1
19
2
21
2
23
24
48-pin TSO
P
1
Standard Type
12mm x 20mm
48
4
46
4
44
4
42
4
40
3
38
3
36
3
34
3
32
31
3
29
2
27
2
25
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSO
P
1 - 1220F
Unit :mm/Inch
0.787
±
0.008
#1
#48
#24
#25
0.039
±
0.002
0.002
MIN
18.40
±
0.10
1.20
MAX
0.724
±
0.004
0~8
°
0.45~0.75
0.018~0.030
(
0.50
0.020
)
4
K9
F
4G
0
8U0A
20.00
±
0.20
1.00
±
0.05
0.05
0.047
K9K8G08U1A
FLASH MEMORY
PIN CONFIGURATION (ULGA)
K9F4G08U0A-ICB0/IIB0
AB
C
D
E
F
G H
J
K L M N
NC
NC
NC
NC
NC
NC
7
NC
/RE
NC
N
C
NC
NC
NC
6
5
4
3
2
Vcc
NC
Vss
IO7
IO5
Vcc
/CE
NC
R/B
N
C
IO6
IO4
NC
CLE
NC
/WE
IO0
IO2
Vss
NC
Vss
NC
/WP
IO1
IO3
Vss
1
NC
ALE
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
PACKAGE DIMENSIONS
52-ULGA (measured in millimeters)
Top View
Bottom View
12.00
±
0.10
A
10.00
2.00
7 6 5 4 3 2 1
1.00
1.00
12.00
±
0.10
B
(Datum A)
1.00
1.00
#A1
(Datum B)
A
B
C
D
E
F
G
H
J
K
L
M
N
12-
∅
1.00
±
0.05
41-
∅
0.70
±
0.0
5
∅
AB
0.1
M
C
∅
AB
0.1
M
C
Side View
17.00
±
0.10
0.10 C
5
K9
F
4G
0
8U0A
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